Constraints on the origin of the first light from SN2014J

We study the very early lightcurve of supernova 2014J (SN 2014J) using the high-cadence broad-band imaging data obtained by the Kilodegree Extremely Little Telescope (KELT), which fortuitously observed M 82 around the time of the explosion, starting more than two months prior to detection, with up to 20 observations per night. These observations are complemented by observations in two narrow-band filters used in an H$\alpha$ survey of nearby galaxies by the intermediate Palomar Transient Factory (iPTF) that also captured the first days of the brightening of the \sn. The evolution of the lightcurves is consistent with the expected signal from the cooling of shock heated material of large scale dimensions, \gsim 1 R_{\odot}. This could be due to heated material of the progenitor, a companion star or pre-existing circumstellar environment, e.g., in the form of an accretion disk. Structure seen in the lightcurves during the first days after explosion could also originate from radioactive material in the outer parts of an exploding white dwarf, as suggested from the early detection of gamma-rays. The model degeneracy translates into a systematic uncertainty of $\pm 0.3$ days on the estimate of the first light from SN 2014J.Comment: Accepted by ApJ. Companion paper by Siverd et al, arXiv:1411.415

Quantized charge pumping through a quantum dot by surface acoustic waves

We present a realization of quantized charge pumping. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through the dot at a frequency f=3GHz. The pumped current shows a regular pattern of quantization at values I=nef over a range of gate voltage and wave amplitude settings. The observed values of n, the number of electrons transported per wave cycle, are determined by the number of electronic states in the quantum dot brought into resonance with the fermi level of the electron reservoirs during the pumping cycle.Comment: 8 page

Effects of accidental microconstriction on the quantized conductance in long wires

We have investigated the conductance of long quantum wires formed in GaAs/AlGaAs heterostructures. Using realistic fluctuation potentials from donor layers we have simulated numerically the conductance of four different kinds of wires. While ideal wires show perfect quantization, potential fluctuations from random donors may give rise to strong conductance oscillations and degradation of the quantization plateaux. Statistically there is always the possibility of having large fluctuations in a sample that may effectively act as a microconstriction. We therefore introduce microconstrictions in the wires by occasional clustering of donors. These microconstrictions are found to restore the quantized plateaux. A similar effect is found for accidental lithographic inaccuracies.Comment: 4 pages, 2 figures, paper for NANO2002 symposium, will appear in SPIE proceeding

Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.Comment: 4 pages; 5 figures; Published in PRB Rapid-Communication

Parallel quantized charge pumping

Two quantized charge pumps are operated in parallel. The total current generated is shown to be far more accurate than the current produced with just one pump operating at a higher frequency. With the application of a perpendicular magnetic field the accuracy of quantization is shown to be $<$20 ppm for a current of $108.9$pA. The scheme for parallel pumping presented in this work has applications in quantum information processing, the generation of single photons in pairs and bunches, neural networking and the development of a quantum standard for electrical current. All these applications will benefit greatly from the increase in output current without the characteristic decrease in accuracy as a result of high-frequency operation

Variation of the hopping exponent in disordered silicon MOSFETs

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems.Comment: 6 pages, 5 figure